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  mga-633p8 ultra low noise, high linearity active bias low noise amplifi er data sheet description avago technologies mga-633p8 is an economical, easy- to-use gaas mmic low noise amplifi er (lna). the lna has low noise and high linearity achieved through the use of avago technologies proprietary 0.25um gaas enhance- ment-mode phemt process. it is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-pin quad-flat-non-lead (qfn) package. it is designed for optimum use from 450mhz up to 2ghz. the compact footprint and low profi le coupled with low noise, high gain and high linearity make the mga-633p8 an ideal choice as a low noise amplifi er for cellular infrastructure for gsm and cdma. for optimum performance at higher frequency from 1.5ghz to 2.3ghz, the mga-634p8 is recommended, and from 2.3ghz to 4ghz, the mga-635p8 is recommended. both mga-634p8 and mga-635p8 share the same package and pinout as mga-633p8 pin confi guration and package marking 2.0 x 2.0 x 0.75 mm 3 8-lead qfn note: package marking provides orientation and identifi cation 33 = device code x = month code features ?? ultra low noise figure ?? high linearity performance ?? gaas e-phemt technology [1] ?? low cost small package size: 2.0 x 2.0 x 0.75 mm 3 ?? excellent uniformity in product specifi cations ?? tape-and-reel packaging option available specifi cations 900mhz; 5v, 54ma ?? 18 db gain ?? 0.37 db noise figure ?? 15db input return loss ?? 37 dbm output ip3 ?? 22 dbm output power at 1db gain compression applications ?? low noise amplifi er for cellular infrastructure for gsm and cdma. ?? other ultra low noise application. simplifi ed schematic [2] [1] [3] [4] [7] [8] [6] [5] top view bottom view [7] [8] [6] [5] [2] [1] [3] [4] 33x pin1 C vbias pin5 C not used pin2 C rfinput pin6 C not used pin3 C not used pin7 C rfoutput / vdd pin4 C not used pin8 C not used centre tab - ground notes: ? the schematic is shown with the assumption that similar pcb is used for all mga-633p8, mga-634p8 and mga-635p8. ? detail of the components needed for this product is shown in table 1. ? enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. ? good rf practice requires all unused pins to be earthed. l1 l2 c3 c1 c2 c4 r2 rfin rfout vdd [2] [1] [3] [4] [7] [8] [6] [5] c6 rbias r1 bias c5 attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 90 v (class a) esd human body model = 600 v (class 1b) refer to avago application note a004r: electrostatic discharge, damage and control.
2 absolute maximum rating [1] t a =25 c symbol parameter units absolute max. v dd device voltage, rf output to ground v 5.5 i dd drain current ma 90 p max cw rf input power (v dd = 5.0 v, i dd = 54 ma) dbm +20 p diss total power dissipation [3] w 0.495 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [2] (v dd = 5.0 v, i dd = 54 ma), ? jc = 72c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. thermal resistance measured using infra- red measurement technique. 3. power dissipation with unit turned on. board temperature t b is 25c. derate at 13.89mw/c for t b >114c. electrical specifi cations [1, 4] rf performance at t a = 25c, v dd =5v, r bias =6.8kohm, 900mhz, measured on demo board in figure 5 with component list in table1 for 900 mhz matching. symbol parameter and test condition units min. typ. max. i dd drain current ma 39 54 67 gain gain db 16.5 18 19.5 oip3 [2] output third order intercept point dbm 34 37 nf [3] noise figure db 0.37 0.6 op1db output power at 1db gain compression dbm 22 irl input return loss, 50 ? source db 15 orl output return loss, 50 ? load db 21 rev isol reverse isolation db 21 notes: 1. measurements at 900 mhz obtained using demo board described in figure 1. 2. oip3 test condition: f rf1 = 900 mhz, f rf2 = 901 mhz with input power of -15dbm per tone. 3. for nf data, board losses of the input have not been de-embedded. 4. use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. see absolute maximum ratings an d application note for more details.
3 product consistency distribution charts [1, 2] figure 1. id @ 900mhz, 5v, 54ma mean = 54 figure 3. oip3 @ 900mhz, 5v, 54ma mean = 37 notes: 1. distribution data samples are 500 samples taken from 3 diff erent wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. circuit losses have not been de-embedded from the actual measurements. figure 2. noise figure @ 900mhz, 5v, 54ma mean = 0.37 figure 4. gain @ 900mhz, 5v, 54ma mean = 18 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 usl lsl usl 0.3 0.4 0.5 0.6 34 35 37 36 38 39 lsl 16.5 17 17.5 17.5 18 19 19.5 usl lsl id max:67 min:39 mean:54 noise figure max:0.6 mean:0.37 oip3 min:34 mean:37 gain max:19.5 min:16.5 mean:18
4 demo board layout figure 5. demo board layout diagram C recommended pcb material is 10 mils rogers ro4350. C suggested component values may vary according to layout and pcb material. demo board schematic figure 6. demo board schematic diagram note: ? the schematic is shown with the assumption that similar pcb is used for all mga-633p8, mga-634p8 and mga-635p8. ? detail of the components needed for this product is shown in table 1. table 1. component list for 900 mhz matching part size value detail part number c1, c2 0402 100pf (murata) grm1555c1h101jd01e l1, l2 0402 33nh (toko) ll1005-fhl33nj c4 0402 33pf (koacera) cm05ch330j50ah c3, c6 0402 4.7uf (murata) grm155r60e475me760 r1 r2 0402 0402 0 ohm (kamaya) 10 ohm (koa) rmc1/16s-jpth rm73b1ettp100j note: c1, c2 are dc blocking capacitors; l1 input match for nf; l2 output match for oip3; c3, c4, c6 are bypass capacitors; r2 is sta bilizing resistor; rbias is the biasing resistor; r1, c5 are not use for this product l1 l2 c3 c1 c2 c4 r2 rfin rfout vdd [2] [1] [3] [4] [7] [8] [6] [5] c6 rbias r1 bias c5
5 mga-633p8 typical performance rf performance at t a = 25c, vdd = 5v, id = 54ma, measured using 50ohm input and output board, unless otherwise stated. oip3 test condition: f rf1 = 900 mhz, f rf2 = 901 mhz with input power of -10dbm per tone. figure 7. fmin vs idd at 5v at 700mhz figure 8. fmin vs idd at 5v at 900mhz figure 10. gain vs idd at 5v tuned for optimum oip3 and fmin at 700mhz figure 11. gain vs idd at 5v tuned for optimum oip3 and f min at 900mhz figure 12. oip3 vs idd at 5v tuned for optimum oip3 and fmin at 700mhz figure 13. oip3 vs idd at 5v tuned for optimum oip3 and f min at 900mhz 0 0.1 0.2 0.3 0.4 0.5 40 50 55 70 80 idd (ma) fmin (db) 15 16 17 18 19 20 40 55 70 80 idd(ma) gain (db) 35 36 37 38 39 40 41 42 43 44 45 40 55 70 80 idd(ma) oip3(dbm) 0 0.1 0.2 0.3 0.4 0.5 40 50 55 70 80 idd (ma) fmin (db) 15 16 17 18 19 20 40 55 70 80 idd(ma) gain (db) 35 36 37 38 39 40 41 42 43 44 45 40 55 70 80 idd(ma) oip3(dbm)
6 figure 14. op1db vs idd at 5v tuned for optimum oip3 and fmin at 700mhz figure 15. op1db vs idd at 5v tuned for optimum oip3 and fmin at 900mhz figure 16. fmin vs frequency and idd at 5v figure 17. oip3 vs frequency and temperature for optimum oip3 and fmin at 5v 54ma figure 18. gain vs frequency and temperature for optimum oip3 and fmin at 5v 54ma 15 16 17 18 19 20 21 22 23 24 25 40 55 70 80 idd(ma) op1db (dbm) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 500 650 700 750 800 900 1700 1900 frequency (mhz) fmin (db) 0 2 4 6 8 10 12 14 16 18 20 22 500 700 750 800 900 1700 1900 frequency (mhz) gain(db) 0 5 10 15 20 25 30 35 40 45 50 500 700 750 800 900 1700 1900 frequency (mhz) oip3(dbm) 15 16 17 18 19 20 21 22 23 24 25 40 55 70 80 idd(ma) op1db (dbm) 40c 25c 85c 40ma 55ma 80ma 40c 25c 85c
7 figure 19. fmin vs frequency and temperature for optimum oip3 and fmin at 5v 54ma figure 20. op1db vs frequency and temperature for optimum oip3 and fmin at 5v 54ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 500 700 750 800 900 1700 1900 frequency (mhz) fmin (db) 40c 25c 85c 0 2 4 6 8 10 12 14 16 18 20 22 24 26 500 700 750 800 900 1700 1900 frequency (mhz) op1db(dbm) 40c 25c 85c below is the table showing the mga-633p8 refl ection coeffi cient parameters tuned for maximum oip3, vdd = 5v, idd = 54ma. frequency (ghz) gamma load position oip3 (dbm) op1db (dbm) magnitude angle 0.50 0.53 122 36.2 22.96 0.70 0.49 115 41.9 21.67 0.75 0.539 113 42.7 20.87 0.80 0.659 123 41.2 21.52 0.90 0.635 145 42.1 20.79 1.70 0.342 -120 41 22.63 1.90 0.333 -74 41.2 23.63 figure 21. notes: 1. the maximum oip3 values are calculated based on load pull measurements on approximately 100 diff erent impedances using maurys load pull test system. 2. measurements are conducted on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfin pin and the output reference plane is at the end of the rfout pin as shown in figure 21. 3. gamma load for maximum oip3 with biasing of 3v 54ma, 3.5v 54ma, 4v 54ma, 4.5v 54ma, 5v 40ma, 5v 54ma and 5v 70ma from 800 m hz to 1.9ghz are available upon request. rfinput reference plane rfoutput reference plane bias [1] [2] [3] [4] [8] [7] [6] [5]
8 mga-633p8 typical performance in demoboard rf performance at t a = 25c, vdd = 5v, rbias = 6.8kohm, measured on demo board in figure.5 with component list in table1 for 900 mhz matching, unless otherwise stated. figure 22. nf vs frequency vs temperature figure 23. gain vs frequency vs temperature figure 24. oip3 vs frequency vs temperature figure 25. op1db vs frequency vs temperature figure 26. input return loss, output return loss, gain, reverse isolation vs frequency figure 27. k-factor vs frequency vs temperature 30 32 34 36 38 40 42 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 500 1000 1500 2000 frequency (mhz) nf (db) 0 500 1000 1500 2000 frequency (mhz) oip3 (dbm) 0 5 10 15 20 25 0 500 1000 1500 2000 frequency (mhz) gain (db) 21 21.5 22 22.5 23 0 500 1000 1500 2000 frequency (mhz) op1db (dbm) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 101214161820 frequency (ghz) k-factor -40c 25c 85c -40c 25c 85c -40c 25c 85c -40c 25c 85c -40c 25c 85c -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 6000 frequency (mhz) irl,orl,gain,rev isol(db) irl orl gain rev isol
9 mga-633p8 typical performance in demoboard rf performance at t a = 25 c, vdd =5v, rbias=6.8kohm, measured on demo board in figure.5 with component list in table1 for 900 mhz matching, unless otherwise stated. figure 28. idd vs rbias figure 29. idd vs vdd vs temperature figure 30. nf vs frequency vs idd figure 31. ga vs frequency vs idd figure 32. oip3 vs frequency vs idd figure 33. op1db vs frequency vs idd 35 40 45 50 55 60 65 70 75 80 85 34567891011 rbias (kohm) idd (ma) 0 5 10 15 20 25 0 500 1000 1500 2000 frequency (mhz) gain (db) 28 30 32 34 36 38 40 42 44 0 500 1000 1500 2000 frequency (mhz) oip3 (dbm) 02468 vdd (v) idd (ma) -40c 25c 85c 21 21.5 22 22.5 23 23.5 0 500 1000 1500 2000 frequency (mhz) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 frequency (mhz) nf (db) 40ma 54ma 70ma 0 500 1000 1500 2000 0 10 20 30 40 50 60 70 80 90 100 op1db (dbm) 40ma 54ma 70ma 40ma 54ma 70ma 40ma 54ma 70ma
10 mga-633p8 typical scattering parameters, vdd = 5v, idd = 54ma freq ghz s 11 s 21 s 12 s 22 mag. ang. db mag. ang. mag. ang. mag. ang. 0.1 0.73 -45.42 28.96 28.06 145.48 0.02 62.09 0.27 -43.62 0.5 0.25 -95.49 22.03 12.64 108.20 0.05 59.34 0.10 -4.56 0.9 0.16 -119.26 18.08 8.02 89.72 0.08 60.53 0.14 -16.96 1.0 0.15 -124.97 17.27 7.30 86.35 0.09 60.46 0.15 -18.82 1.5 0.10 -142.55 14.10 5.07 70.97 0.12 56.12 0.19 -39.65 1.9 0.07 -158.30 12.17 4.06 60.60 0.15 51.25 0.19 -56.21 2.0 0.07 -162.64 11.74 3.86 58.17 0.16 49.92 0.19 -60.31 2.5 0.05 177.70 9.88 3.12 46.59 0.20 43.20 0.21 -79.41 3.0 0.03 162.14 8.36 2.62 35.95 0.23 36.08 0.23 -95.09 4.0 0.01 -41.60 6.00 2.00 16.45 0.30 22.04 0.25 -118.55 5.0 0.03 -64.06 4.27 1.64 -1.63 0.36 7.61 0.25 -144.60 6.0 0.04 -129.24 2.96 1.41 -18.89 0.42 -7.19 0.24 -170.64 7.0 0.07 -152.03 1.85 1.24 -35.43 0.47 -22.36 0.26 165.84 8.0 0.12 -154.39 0.87 1.11 -50.92 0.52 -37.15 0.29 150.25 9.0 0.18 -161.44 0.05 1.01 -65.12 0.56 -51.58 0.33 138.58 10.0 0.21 -177.23 -0.57 0.94 -78.96 0.60 -66.28 0.35 124.74 11.0 0.21 156.03 -1.03 0.89 -93.28 0.63 -81.96 0.33 104.27 12.0 0.22 124.49 -1.53 0.84 -108.35 0.66 -98.72 0.33 78.81 13.0 0.26 104.45 -2.13 0.78 -122.84 0.66 -115.13 0.38 62.57 14.0 0.33 95.24 -2.66 0.74 -135.50 0.66 -129.75 0.42 60.19 15.0 0.39 84.99 -2.96 0.71 -146.69 0.66 -143.01 0.43 60.20 16.0 0.42 67.14 -3.10 0.70 -159.52 0.67 -157.83 0.40 50.25 17.0 0.43 44.98 -3.53 0.67 -175.16 0.66 -175.42 0.40 27.20 18.0 0.49 28.99 -4.50 0.60 169.61 0.60 167.43 0.48 10.68 19.0 0.57 17.18 -5.59 0.53 156.86 0.53 152.94 0.56 7.82 20.0 0.62 5.97 -6.14 0.49 145.85 0.50 140.18 0.60 6.77 figure 34 rfinput reference plane rfoutput reference plane bias [1] [2] [3] [4] [8] [7] [6] [5]
11 part number ordering information part number no. of devices container MGA-633P8-BLKG 100 antistatic bag mga-633p8-tr1g 3000 7 inch reel slp2x2 package typical noise parameters, vdd = 5v, idd = 54ma freq ghz fmin db ? opt mag. ? opt ang. r n/50 0.5 0.46 0.169 -37 0.051 0.7 0.38 0.15 -17 0.0586 0.75 0.36 0.144 -15 0.0532 0.8 0.35 0.136 -13 0.0478 0.9 0.33 0.129 -7 0.0446 1.7 0.46 0.048 80.5 0.0644 1.9 0.51 0.028 98.7 0.0498 notes: 1. the fmin values are based on noise fi gure measurements at 100 diff erent impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in figure 30. 3. s2p fi le with scattering and noise parameters for biasing 3v 54ma, 3.5v 54ma, 4v 54ma, 4.5v 54ma, 5v 40ma, 5v 54ma and 5v 70ma are available upon request. p i n 1 d o t b y mar ki ng 2.00 0.050 2.00 0.050 33 x 0.203 ref. 0.000 C 0.05 0.75 0.05 0.60 0.050 ex p. d ap 0.35 0.050 0.25 0.050 1 .20 0.050 ex p. d ap 1 .50 ref. 0.50 bsc p i n #1 ide n tifi ca ti on r0. 1 00 no t es : 1 . a ll dime n sio n s are i n mi ll ime t ers. 2. d ime n sio n s are i n c lu si v e of p l a t i ng . 3. d ime n sio n s are e x c lu si v e of mo l d fl as h a n d me t a l b u rr. t op v iew bo tt om v iew side v iew
12 recommended pcb land pattern and stencil design 0.50 r0. 1 5 0. 1 7 0.50 1 .50 0.2 1 1 .75 0.56 me t a l s u rface so l dermas k ope n 0.50 0.25 r0. 1 5 0.45 0.30 0.50 1 .20 1 .50 0.50 0.05 ( a ll sm g aps ) 2.20 1 .75 0.00 0.80 0.50 0.22 0.40 0. 1 70 0.48 0.2 1 1 .50 1 .72 2. 1 6 1 .75 0.56 no t e : 1 . recomme n ded l a n d pa tt er n a n d s t e n ci l ope n i ng 2. s t e n ci l th ic kn ess is 0. 1 mm ( 4 mi l s ) 3. a ll dime n sio n are i n mm unl ess o th erwise speci fi ed l a n d pa tt er n s t e n ci l ope n i ng combi n a t io n of l a n d pa tt er n a n d s t e n ci l ope n i ng
13 device orientation tape dimensions user fee d d irection cover tape carrier tape reel 8 mm 4 mm 33x 33x 33x 33x p 0 p f w d 1 e p 2 a 0 10 max t 1 k 0 d escription symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p 1 d 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 0.254 0.02 0.315 0.012 8.00 0.10 0.315 0.004 0.010 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.004 cover tape d ++ t t 10 max b o
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2012 avago technologies. all rights reserved. av02-2329en - may 25, 2012 reel dimensions C 7 inch ps 6 ps 6 back view ?178.01.0 ?55.00.5 6.25mm embosse d letters lettering thickness : 1.6mm see d etail "x" slot hole "b" slot hole(2x) 180 apart. slot hole "a" : 3.00.5mm(1x) slot hole "b" : 2.50.5mm(1x) ?13.0 65 45 r10.65 60 r5.2 embosse d ribs raise d: 0.25mm, wi d th : 1.25mm 14.4 * max. ?51.20.3 recycle logo front view 120 1.5 min. ?20.2 min. -0.2 +0.5 d etail "x" d etail "y" (slot hole) 3.5 1.0 see d etail "y" front back front back slot hole "a" ?178.00.5 slot hole a slot hole b -0.0 +1.5* 8.4 7.9 - 10.9**


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